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| (R) SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES M174 epoxy sealed ORDER CODE BRANDING SD2931-10 TSD2931-10 DESCRIPTION The SD2931-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc large signal applications up to 230 MHz. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications. PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 125 125 20 20 389 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 0.45 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). March 2000 1/10 SD2931-10 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) G FS C ISS C OSS C RSS * Parameter V GS = 0V V GS = 0V V GS = 20V VDS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V I DS = 100 mA V DS = 50 V V DS = 0 V I D = 250 mA ID = 10 A ID = 5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz Min. 125 Typ . Max. 5 5 Un it V mA A V V mho 2.0 5 480 190 18 5.0 3.0 V DS( ON) pF pF pF REF. 7165489C * VGS(Q) sorted with alpha/numeric code marked on unit. DYNAMIC Symb ol P OUT G PS D f = 175 MHz f = 175 MHz f = 175 MHz Parameter V DD = 50 V V DD = 50 V V DD = 50 V I DQ = 250 mA P ou t = 150 W P ou t = 150 W P ou t = 150 W IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA Min. 150 14 55 10:1 15 65 Typ . Max. Un it W dB % VSW R Load f = 175 MHz V DD = 50 V Mismatch All Phase Angles IMPEDANCE DATA VGS SORTS A B C D E F G H J K L M N P Q 2.0 - 2.1 2.1 - 2.2 2.2 - 2.3 2.3 - 2.4 2.4 - 2.5 2.5 - 2.6 2.6 - 2.7 2.7 - 2.8 2.8 - 2.9 2.9 - 3.0 3.0 - 3.1 3.1 - 3.2 3.2 - 3.3 3.3 - 3.4 3.4 - 3.5 R S T U V W X Y Z 2 3 4 5 6 7 3.5 - 3.6 3.6 - 3.7 3.7 - 3.8 3.8 - 3.9 3.9 - 4.0 4.0 - 4.1 4.1 - 4.2 4.2 - 4.3 4.3 - 4.4 4.4 - 4.5 4.5 - 4.6 4.6 - 4.7 4.7 - 4.8 4.8 - 4.9 4.9 - 5.0 F REQ . 30 MHz 175 MHz Z IN () 1.7 - j 5.7 1.2 - j 2.0 Z DL () 6.8 + j 0.9 2.0 + j 2.4 2/10 SD2931-10 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage 10000 Drain Current vs Gate Voltage 20 Tc=-20 C ID, DRAIN CURRENT (A) Tc=+25 C C, CAPACITANCE (pF) 15 1000 f =1MHz Ciss 10 Tc=+80 C Coss 100 5 Crss 10 0 10 20 30 40 50 0 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Gate-Source Voltages vs Case Temperature Maximum Thermal Resistance vs Case Temperature 0.6 VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.1 Id =9A Id =7A 1.05 Id =11A Id =10A 1 RTH(j-c) (C/W) Id =5A 0.56 0.52 0.95 Id =4A Id =2A 0.9 Id =.25A Id =1A 0.48 0.85 Id =.1A 0.44 25 35 45 55 65 75 85 100 0.8 -25 0 25 50 75 Tc, CASE TEMPERATURE (C) Tc, CASE TEMPERATURE (C) DC Safe Operating Area 100 Ids(A) 10 (1) 1 1 10 100 1000 Vds(V) (1) Current in this area may be limited by Rds(on) 3/10 SD2931-10 TYPICAL PERFORMANCE (175 MHz) Output Power vs Input Power 250 Pout =50V Output Power vs Input Power 270 240 Tc=-20 C Tc =+25 C Pout, OUTPUT POWER(W) Pout, OUTPUT POWER (W) 200 Pout =40V 210 180 150 100 50 0 0 5 10 15 20 25 f=175Mhz Idq=250mA Tc =+80 C 150 120 90 60 30 0 0 5 10 15 20 25 Vdd=50V Id q=250mA f=175Mhz Pin, INPUT POWER(W) Pin, INPUT POWER(W) Power Gain vs Output Power 15 Efficency vs Output Power 70 Nc, EFFICIENCY (%) Gp, POWER GAIN (dB) 14 60 13 50 12 Vdd=50V Idq=250mA f=175Mhz 40 11 Vdd=50V Idq=250mA f=175Mhz 30 10 0 50 100 150 200 250 0 50 100 150 200 250 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs Supply Voltage 250 Pin =10W Output Power vs Gate Voltage Pout, OUTPUT POWER (W) 200 Tc =+25 C Tc =-20 C Pout,Output Power(W) 200 Pin =5W 150 Tc =+80 C 150 Pin =2.5W 100 100 50 50 Idq=250mA f=175Mhz 0 24 28 32 36 40 44 48 52 0 -3 -2 -1 0 1 2 3 Vdd,Drain Voltage(V) VGS, GATE-SOURCE VOLTAGE(V) 4/10 SD2931-10 175 MHz Test Circuit Schematic (Production Test Circuit) VG +50V Note : All dimensions in inches REF. 1021579C 175 MHz Test Circuit Component Part List T1 T2 FB1 FB2, FB3 FB4 L1 PCB R1, R3 R2 C1, C11 C2 C3, C8, C9 C4 C5 C6 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 " Long 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6 " Long Toroid X 2, 0.5" OD .312" ID 850u 2 Turns VK200 Shield Bead, 1" OD 0.5" ID 850u 3 Turns 1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 " Long 0.062" Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55 470 ohm 1W Chip Resistor R4 20K ohm 10 Turn Potentiometer 360 ohm 1/2W Resistor R5 560 ohm 1W Resistor 470 pF ATC Chip Cap C7 30 pF ATC Chip Cap 43 pF ATC Chip Cap C10 91 pF ATC Chip Cap Arco 404, 12-65 pF C12, C15 1200 pF ATC Chip Cap Arco 423, 16-100 pF C13, C14 0.01 uF / 500V Chip Cap 120 pF ATC Chip Cap C16, C17 0.01 uF / 500V Chip Cap 0.01 uF ATC Chip Cap C18 10 uF 63V Electrolytic Capacitor 5/10 SD2931-10 175 MHz Test Circuit Photomaster 175 MHz Test Circuit 6/10 SD2931-10 TYPICAL PERFORMANCE (30 MHz) Output Power vs Input Power Power Gain vs Output Power 250 28.5 Pout, OUTPUT POWER(W) 200 PG, POWER GAIN (dB) Vdd = 50V 28 150 Vdd = 40V 27.5 f = 30 MHz VDD = 50 V IDQ = 250 mA 100 f = 30 MHz IDQ = 250 mA 50 27 0 0.01 0.06 0.11 0.16 0.21 0.25 0.3013 0.35 0.40 26.5 0 50 100 150 200 Pin, INPUT POWER (W) Pout, OUTPUT POWER (W) Efficency vs Output Power Output Power vs Supply Voltage 200 Pout, OUTPUT POWER(W) 60 Pin=.31 W Pin=.22 W Efficiency(%) 50 40 30 20 10 0 0 50 100 150 200 f= 30 MHz VDD = 50 V IDQ = 250 mA 150 100 Pin=.13 W 50 f = 30 MHz IDQ = 250 mA 0 24 28 32 36 40 44 48 52 Pout, OUTPUT POWER (W) VDD, SUPPLY VOLTAGE(V) Output Power vs Gate Voltage 200 Pout, OUTPUT POWER (W) T= +25 C T= -20 C 150 100 T= +80 C 50 VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant 0 0 1 2 3 4 5 6 VGS GATE-SOURCE VOLTAGE (V) 7/10 SD2931-10 30 MHz Test Circuit Schematic (Engineering Test Circuit) VG + +50V 30 MHz Test Circuit Component Part List T1 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15" Long T2 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15" Long FB1 Toroid, 1.7" OD .30" ID 220u 4 Turns FB2 Surface Mount EMI Shield Bead FB3 Toroid, 1.7" OD .300" ID 220u 3 Turns RFC1 Toroid, 0.5" OD 0.30" ID, 125u 4 turns 12 awg wire PCB 0.062" Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55 C1, C4, C6, C7, C8, 0.01 uF ATC Chip Cap C5 470 pF ATC Chip Cap C9, C11, C12, C13 0.01 uF ATC Chip Cap C10 10 uF 63V Electrolytic Capacitor C2, C3 750 pF ATC Chip Cap C14 100 uF 63V Electrolytic Capacitor R1, R3 1K ohm 1W Chip Resistor R2 680 ohm 3W Wirewound Resistor 8/10 SD2931-10 M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K L M 25.53 3.05 24.64 12.57 0.08 2.11 3.81 6.22 18.28 3.18 24.89 12.83 0.18 3.00 4.45 7.11 26.67 3.30 1.005 0.120 0.970 0.495 0.003 0.083 0.150 5.56 3.18 6.48 18.54 0.245 0.720 0.125 0.980 0.505 0.007 0.118 0.175 0.280 1.050 0.130 TYP. MAX. 5.84 MIN. 0.219 0.125 0.255 0.730 inch TYP. MAX. 0.230 DIM. Controlling Dimension in Inches 1011000D 9/10 SD2931-10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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